Discrete Semiconductor Products

EMB3FHAT2R

NRND

RF TRANSISTOR, AEC-Q101, PNP, 4.7K, -50V

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Discrete Semiconductor Products

NRND

RF TRANSISTOR, AEC-Q101, PNP, 4.7K, -50V

Technical Specifications

Parameters and characteristics for this part

Specification	EMB3FHAT2R

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	250 MHz
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Qualification	AEC-Q101
Resistor - Base (R1)	4.7 kOhms
Supplier Device Package	EMT6
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Transistor Type	Current - Collector Cutoff (Max) [Max]	Mounting Type	Resistor - Base (R1)	Qualification	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case
Rohm Semiconductor EMB3FHAT2R	100	Automotive	100 mA	250 MHz	2 PNP - Pre-Biased (Dual)	500 nA	Surface Mount	4.7 kOhms	AEC-Q101	300 mV	EMT6	50 V	SOT-563 SOT-666

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Technical documentation and resources