Specification	SSM6K517NU,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.2 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	1.25 W
Rds On (Max) @ Id, Vgs	39.1 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	12 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1 V

SSM6K517 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 6 A, 0.0391 Ω@4.5V, SOT-1220(UDFN6B)

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max) [Max]	Vgs (Max) [Min]	Operating Temperature	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
Toshiba Semiconductor and Storage SSM6K517NU,LF	39.1 mOhm	1.8 V	4.5 V	1 V	MOSFET (Metal Oxide)	30 V	N-Channel	6 A	6-UDFNB (2x2)	12 V	-8 V	150 °C	1.25 W	3.2 nC	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 6 A, 0.0391 Ω@4.5V, SOT-1220(UDFN6B)

Technical documentation and resources