Discrete Semiconductor Products
BUK9M6R7-40HX
ActiveNexperia USA Inc.
N-CHANNEL 40 V, 6.7 MΩ LOGIC LEVEL MOSFET IN LFPAK33
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Discrete Semiconductor Products
BUK9M6R7-40HX
ActiveNexperia USA Inc.
N-CHANNEL 40 V, 6.7 MΩ LOGIC LEVEL MOSFET IN LFPAK33
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Technical Specifications
Parameters and characteristics for this part
| Specification | BUK9M6R7-40HX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 2054 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Power Dissipation (Max) | 65 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 6.7 mOhm |
| Supplier Device Package | LFPAK33 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V, -10 V |
| Vgs(th) (Max) @ Id | 2.15 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 4491 | $ 2.00 | |
Description
General part information
BUK9M6R7-40H Series
Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.
Documents
Technical documentation and resources