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8 MSOP
RF and Wireless

HMC349AMS8GE

Active
Analog Devices Inc./Maxim Integrated

HIGH ISOLATION, NONREFLECTIVE, GAAS, SPDT SWITCH,100 MHZ TO 4 GHZ

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8 MSOP
RF and Wireless

HMC349AMS8GE

Active
Analog Devices Inc./Maxim Integrated

HIGH ISOLATION, NONREFLECTIVE, GAAS, SPDT SWITCH,100 MHZ TO 4 GHZ

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC349AMS8GE
CircuitSPDT
Frequency Range [Max]4 GHz
Frequency Range [Min]0 Hz
IIP3 [Min]53 dBm
Impedance50 Ohms
Insertion Loss1.2 dB
Isolation50 dB
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 C
Package / Case3 mm, 0.118 in
Package / CaseExposed Pad, 8-MSOP, 8-TSSOP
RF TypeGeneral Purpose
Supplier Device Package8-MSOP-EP
Test Frequency3 GHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyStrip 1$ 8.76<1d
10$ 6.80
25$ 6.31
100$ 5.78
250$ 5.52
500$ 5.37
1000$ 5.24

Description

General part information

HMC349 Series

The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-morphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm.The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface.The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad.ApplicationsCellular/4G infrastructureWireless infrastructureMobile radiosTest equipment