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SOT669
Discrete Semiconductor Products

BUK7Y21-40EX

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Nexperia USA Inc.

N-CHANNEL 40 V, 21 MΩ STANDARD LEVEL MOSFET IN LFPAK56

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SOT669
Discrete Semiconductor Products

BUK7Y21-40EX

Active
Nexperia USA Inc.

N-CHANNEL 40 V, 21 MΩ STANDARD LEVEL MOSFET IN LFPAK56

Technical Specifications

Parameters and characteristics for this part

SpecificationBUK7Y21-40EX
Current - Continuous Drain (Id) @ 25°C33 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]617 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-100, SOT-669
Power Dissipation (Max)45 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs21 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2686$ 1.23

Description

General part information

BUK7Y21-40E Series

Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.