Discrete Semiconductor Products

G2SB80-M3/51

Obsolete

BRIDGE RECT 1PHASE 800V 1.5A GBL

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Discrete Semiconductor Products

Obsolete

BRIDGE RECT 1PHASE 800V 1.5A GBL

Technical Specifications

Parameters and characteristics for this part

Specification	G2SB80-M3/51

Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	GBL, 4-SIP
Supplier Device Package	GBL
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1 V
Voltage - Peak Reverse (Max) [Max]	800 V

Part	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Voltage - Forward (Vf) (Max) @ If	Diode Type	Technology	Mounting Type	Supplier Device Package	Voltage - Peak Reverse (Max) [Max]
Vishay General Semiconductor - Diodes Division G2SB80-M3/45	5 µA	1.5 A	-55 °C	150 °C	4-SIP GBL	1 V	Single Phase	Standard	Through Hole	GBL	800 V
Vishay General Semiconductor - Diodes Division G2SB80-M3/51	5 µA	1.5 A	-55 °C	150 °C	4-SIP GBL	1 V	Single Phase	Standard	Through Hole	GBL	800 V
Vishay General Semiconductor - Diodes Division G2SB80-E3/45	50 µA	1.5 A	-55 °C	150 °C	4-SIP GBL	1 V	Single Phase	Standard	Through Hole	GBL	800 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bridge Rectifier Single Phase Standard 800 V Through Hole GBL

Technical documentation and resources

No documents available