Discrete Semiconductor Products

BSP296NH6327XTSA1

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TRANS MOSFET N-CH 100V 1.2A AUTOMOTIVE AEC-Q101 4-PIN(3+TAB) SOT-223 T/R

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Discrete Semiconductor Products

Active

TRANS MOSFET N-CH 100V 1.2A AUTOMOTIVE AEC-Q101 4-PIN(3+TAB) SOT-223 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	BSP296NH6327XTSA1

Current - Continuous Drain (Id) @ 25°C	1.2 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.7 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	152.7 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.8 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	PG-SOT223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Technology	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Qualification	Grade	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C
INFINEON BSP296NH6327XTSA1	4.5 V 10 V	Surface Mount	20 V	MOSFET (Metal Oxide)	N-Channel	PG-SOT223-4	600 mOhm	1.8 V	100 V	AEC-Q101	Automotive	150 °C	-55 °C	6.7 nC	1.8 W	152.7 pF	TO-261-4 TO-261AA	1.2 A
INFINEON BSP296NH6433XTMA1	4.5 V 10 V	Surface Mount	20 V	MOSFET (Metal Oxide)	N-Channel	PG-SOT223-4	600 mOhm	1.8 V	100 V	AEC-Q101	Automotive	150 °C	-55 °C	6.7 nC	1.8 W	152.7 pF	TO-261-4 TO-261AA	1.2 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 1.2A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Technical documentation and resources