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IRF6614TR1PBF
Discrete Semiconductor Products

IRF6648TRPBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 60 V, 86 A, 0.0055 OHM, DIRECTFET MN, SURFACE MOUNT

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IRF6614TR1PBF
Discrete Semiconductor Products

IRF6648TRPBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 60 V, 86 A, 0.0055 OHM, DIRECTFET MN, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF6648TRPBF
Current - Continuous Drain (Id) @ 25°C86 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs50 nC
Input Capacitance (Ciss) (Max) @ Vds2120 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseDirectFET™ Isometric MN
Power Dissipation (Max)2.8 W, 89 W
Rds On (Max) @ Id, Vgs7 mOhm
Supplier Device PackageDIRECTFET™ MN
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.02
10$ 1.96
100$ 1.36
500$ 1.10
1000$ 1.02
2000$ 0.96
Digi-Reel® 1$ 3.02
10$ 1.96
100$ 1.36
500$ 1.10
1000$ 1.02
2000$ 0.96
N/A 11879$ 1.65
Tape & Reel (TR) 4800$ 0.96
NewarkEach (Supplied on Cut Tape) 1$ 2.43
10$ 1.80
25$ 1.67
50$ 1.52
100$ 1.39
250$ 1.38
500$ 1.25
1000$ 1.12

Description

General part information

IRF6648 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.