Discrete Semiconductor Products

SIR330DP-T1-GE3

Obsolete

MOSFET N-CH 30V 35A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 35A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR330DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	35 nC
Input Capacitance (Ciss) (Max)	1300 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	27.7 W, 5 W
Rds On (Max)	5.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Mounting Type	Input Capacitance (Ciss) (Max)	FET Type	Rds On (Max)	Gate Charge (Max)	Power Dissipation (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Vgs (Max)	Package Name
Vishay Dale SIR330DP-T1-GE3	Surface Mount	1300 pF	N-Channel	5.6 mOhm	35 nC	5 W 27.7 W	2.5 V	35 A	PowerPAK® SO-8	30 V	10 V	4.5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	20 V	PowerPAK® SO-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.46	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 35A (Tc) 5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources