Discrete Semiconductor Products
PSMN8R5-60YS,115
ActiveNexperia USA Inc.
N-CHANNEL LFPAK 60 V, 8 MΩ STANDARD LEVEL MOSFET
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Discrete Semiconductor Products
PSMN8R5-60YS,115
ActiveNexperia USA Inc.
N-CHANNEL LFPAK 60 V, 8 MΩ STANDARD LEVEL MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN8R5-60YS,115 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 76 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2370 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-100, SOT-669 |
| Power Dissipation (Max) | 106 W |
| Rds On (Max) @ Id, Vgs | 8 mOhm |
| Supplier Device Package | Power-SO8, LFPAK56 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 37920 | $ 2.37 | |
Description
General part information
PSMN8R5-60YS Series
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Documents
Technical documentation and resources