Discrete Semiconductor Products

SI7540DP-T1-GE3

Obsolete

MOSFET N/P-CH 12V 7.6A PPAK SO8

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 12V 7.6A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7540DP-T1-GE3

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	5.7 A
Current - Continuous Drain (Id) (Typical)	7.6 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
Gate Charge (Max)	17 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Package Name	PowerPAK® SO-8 Dual
Power - Max	1.4 W
Rds On (Max)	17 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.5 V

Part	Power - Max	Package / Case	Technology	Vgs(th) (Max)	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Gate Charge (Max)	FET Feature	Drain to Source Voltage (Vdss)	Configuration	Package Name	Mounting Type
Vishay Dale SI7540DP-T1-GE3	1.4 W	PowerPAK® SO-8 Dual	MOSFET (Metal Oxide)	1.5 V	7.6 A	5.7 A	-55 °C	150 °C	17 mOhm	17 nC	Logic Level Gate	12 V	N P-Channel	PowerPAK® SO-8 Dual	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

Mosfet Array 12V 7.6A, 5.7A 1.4W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources