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INFINEON IPD90P03P4L04ATMA2
Discrete Semiconductor Products

IPD028N06NF2SATMA1

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INFINEON

STRONGIRFET™ 2 SINGLE N-CHANNEL POWER MOSFET 60 V IN DPAK PACKAGE

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INFINEON IPD90P03P4L04ATMA2
Discrete Semiconductor Products

IPD028N06NF2SATMA1

Active
INFINEON

STRONGIRFET™ 2 SINGLE N-CHANNEL POWER MOSFET 60 V IN DPAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD028N06NF2SATMA1
Current - Continuous Drain (Id) @ 25°C139 A, 24 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs102 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]4600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)3 W, 150 W
Rds On (Max) @ Id, Vgs2.85 mOhm
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.04
10$ 1.38
100$ 0.98
500$ 0.80
1000$ 0.78
Digi-Reel® 1$ 2.04
10$ 1.38
100$ 0.98
500$ 0.80
1000$ 0.78
N/A 3197$ 2.22
Tape & Reel (TR) 2000$ 0.65
4000$ 0.63
NewarkEach (Supplied on Cut Tape) 1$ 2.47
10$ 1.75
25$ 1.63
50$ 1.49
100$ 1.37
250$ 1.30
500$ 1.19
1000$ 1.11

Description

General part information

IPD028 Series

Infineon'sStrongIRFET™ 2power MOSFET 60 V features low RDS(on)of 2.85 mOhm, addressing a broad range of applications from low- to high-switching frequency.

Documents

Technical documentation and resources