Discrete Semiconductor Products

SIB410DK-T1-GE3

Obsolete

MOSFET N-CH 30V 9A PPAK SC75-6

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 9A PPAK SC75-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIB410DK-T1-GE3

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Input Capacitance (Ciss) (Max) @ Vds	560 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-75-6
Power Dissipation (Max)	13 W, 2.5 W
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	PowerPAK® SC-75-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	FET Type	Package / Case	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SIB410DK-T1-GE3	N-Channel	PowerPAK® SC-75-6	Surface Mount	MOSFET (Metal Oxide)	15 nC	PowerPAK® SC-75-6	-55 °C	150 °C	42 mOhm	1 V	1.8 V 4.5 V	560 pF	8 V	9 A	2.5 W 13 W	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 9A (Tc) 2.5W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

Technical documentation and resources