Discrete Semiconductor Products

AOTF5B60D

NRND

IGBT 600V 10A 31.2W TO220F

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Discrete Semiconductor Products

NRND

IGBT 600V 10A 31.2W TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF5B60D

Current - Collector (Ic) (Max) [Max]	14 A
Current - Collector Pulsed (Icm)	20 A
Gate Charge	9.4 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	31.2 W
Reverse Recovery Time (trr)	98 ns
Supplier Device Package	TO-220F
Switching Energy	40 µJ, 140 µJ
Td (on/off) @ 25°C [Max]	83 ns
Td (on/off) @ 25°C [Min]	12 ns
Test Condition	400 V, 15 V, 60 Ohm, 5 A
Vce(on) (Max) @ Vge, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Reverse Recovery Time (trr)	Mounting Type	Test Condition	Td (on/off) @ 25°C [Min]	Td (on/off) @ 25°C [Max]	Vce(on) (Max) @ Vge, Ic	Gate Charge	Current - Collector Pulsed (Icm)	Supplier Device Package	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Switching Energy	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
Alpha & Omega Semiconductor Inc. AOTF5B60D	98 ns	Through Hole	5 A 15 V 60 Ohm 400 V	12 ns	83 ns	1.8 V	9.4 nC	20 A	TO-220F	31.2 W	600 V	14 A	40 µJ 140 µJ	150 °C	-55 °C	TO-220-3 Full Pack
Alpha & Omega Semiconductor Inc. AOTF5N50FD		Through Hole							TO-220F					150 °C	-55 °C	TO-220-3 Full Pack	5 A	500 V	MOSFET (Metal Oxide)	530 pF	15 nC	N-Channel	1.8 Ohm	30 V	10 V	35 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly