Integrated Circuits (ICs)

CY15B102Q-SXE

Active

RELIABLE 2048KBIT SPI FRAM WITH 20MHZ FREQUENCY, AUTOMOTIVE(E) QUALIFICATION, AND WIDE OPERATING TEMPERATURE RANGE OF -40°C TO 125°C.

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Integrated Circuits (ICs)

CY15B102Q-SXE

Active

INFINEON

RELIABLE 2048KBIT SPI FRAM WITH 20MHZ FREQUENCY, AUTOMOTIVE(E) QUALIFICATION, AND WIDE OPERATING TEMPERATURE RANGE OF -40°C TO 125°C.

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CY15B102Q-SXE

Clock Frequency	25 MHz
Grade	Automotive
Memory Format	FRAM
Memory Interface	SPI
Memory Organization	256K x 8
Memory Size	2 Gbit
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	5.3 mm, 0.209 in
Package / Case	8-SOIC
Qualification	AEC-Q100
Supplier Device Package	8-SOIC
Technology	FRAM (Ferroelectric RAM)
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2 V

CY15B102 Series

Part	Mounting Type	Memory Format	Technology	Memory Interface	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Clock Frequency	Access Time	Memory Type	Memory Size	Memory Organization	Supplier Device Package	Package / Case	Package / Case	Grade	Qualification	Memory Organization [custom]	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]
INFINEON CY15B102QN-50PZXI	Through Hole	FRAM	FRAM (Ferroelectric RAM)	SPI	3.6 V	1.8 V	85 C	-40 ¯C	50 MHz	8 ns	Non-Volatile	2 Gbit	256K x 8	8-PDIP	8-DIP (0.300" 7.62mm)
INFINEON CY15B102QSN-108SXI	Surface Mount	FRAM	FRAM (Ferroelectric RAM)	QPI SPI - Quad I/O	3.6 V	1.8 V	85 C	-40 ¯C	108 MHz	7 ns	Non-Volatile	2 Gbit	256K x 8	8-SOIC	8-SOIC	0.209 in 5.3 mm
INFINEON CY15B102Q-SXE	Surface Mount	FRAM	FRAM (Ferroelectric RAM)	SPI	3.6 V	2 V	125 °C	-40 °C	25 MHz		Non-Volatile	2 Gbit	256K x 8	8-SOIC	8-SOIC	0.209 in 5.3 mm	Automotive	AEC-Q100
INFINEON CY15B102N-ZS60XM	Surface Mount	FRAM	FRAM (Ferroelectric RAM)	Parallel	3.6 V	2 V	85 C	-40 ¯C		90 ns	Non-Volatile	2 Gbit		44-TSOP II	44-TSOP (0.400" 10.16mm Width)		Automotive	AEC-Q100	128 K	90 ns	90 ns
INFINEON CY15B102QN-50LHXIT	Surface Mount	FRAM	FRAM (Ferroelectric RAM)	SPI	3.6 V	1.8 V	85 C	-40 ¯C	50 MHz	8 ns	Non-Volatile	2 Gbit	256K x 8	8-DFN (5x6)	8-WDFN Exposed Pad
INFINEON CY15B102QN-50LHXI	Surface Mount	FRAM	FRAM (Ferroelectric RAM)	SPI	3.6 V	1.8 V	85 C	-40 ¯C	50 MHz	8 ns	Non-Volatile	2 Gbit	256K x 8	8-DFN (5x6)	8-WDFN Exposed Pad
INFINEON CY15B102QN-50SXIT	Surface Mount	FRAM	FRAM (Ferroelectric RAM)	SPI	3.6 V	1.8 V	85 C	-40 ¯C	50 MHz	8 ns	Non-Volatile	2 Gbit	256K x 8	8-SOIC	8-SOIC	0.209 in 5.3 mm
INFINEON CY15B102QSN-108SXIT	Surface Mount	FRAM	FRAM (Ferroelectric RAM)	QPI SPI - Quad I/O	3.6 V	1.8 V	85 C	-40 ¯C	108 MHz	7 ns	Non-Volatile	2 Gbit	256K x 8	8-SOIC	8-SOIC	0.209 in 5.3 mm
INFINEON CY15B102QN-50SXI	Surface Mount	FRAM	FRAM (Ferroelectric RAM)	SPI	3.6 V	1.8 V	85 C	-40 ¯C	50 MHz	8 ns	Non-Volatile	2 Gbit	256K x 8	8-SOIC	8-SOIC	0.209 in 5.3 mm
INFINEON CY15B102QN-50SXE	Surface Mount	FRAM	FRAM (Ferroelectric RAM)	SPI	3.6 V	1.8 V	125 °C	-40 °C	50 MHz		Non-Volatile	2 Gbit	256K x 8	8-SOIC	8-SOIC	0.209 in 5.3 mm	Automotive	AEC-Q100

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	77	$ 7.00
		77	$ 7.00
		512	$ 13.68
		512	$ 13.68
	Tube	1	$ 18.47
		1	$ 18.47
		10	$ 17.09
		10	$ 17.09
		25	$ 16.86
		25	$ 16.86
		75	$ 7.00
		75	$ 7.00
		94	$ 14.59
		94	$ 14.59
		282	$ 13.97
		282	$ 13.97
		564	$ 13.88
		564	$ 13.88
Newark	Each	1	$ 19.42
		5	$ 18.47
		10	$ 17.51
		25	$ 14.56
		50	$ 14.50
		100	$ 14.42
		250	$ 14.14

Description

General part information

CY15B102 Series

CY15B102Q-SXE is a 2Mbit (256 K × 8) serial (SPI) automotive F-RAM. It is a non-volatile memory employing an advanced ferroelectric process. F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. The CY15B102Q is capable of supporting 10^13 read/write cycles, or 10 million times more write cycles than EEPROM. It is ideal for non-volatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss.

Documents

Technical documentation and resources