Littelfuse Power Semi TO-263 3 1S2C image

Discrete Semiconductor Products

IXTA140P05T

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Littelfuse/Commercial Vehicle Products

DISCMSFT PCHAN-TRENCH GATE TO-263D2

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Discrete Semiconductor Products

IXTA140P05T

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT PCHAN-TRENCH GATE TO-263D2

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA140P05T

Current - Continuous Drain (Id) @ 25°C	140 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	200 nC
Input Capacitance (Ciss) (Max) @ Vds	13500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	298 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4 V

IXTA140N12T2 Series

DiscMSFT NChTrenchGate-Gen2 TO-263D2

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	FET Type	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs
Littelfuse/Commercial Vehicle Products IXTA140N12T2	10 mOhm	9700 pF	577 W	N-Channel	TO-263AA	MOSFET (Metal Oxide)	140 A	10 V	-55 °C	175 ░C	Surface Mount	174 nC	20 V	120 V	4.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Littelfuse/Commercial Vehicle Products IXTA140P05T	9 mOhm	13500 pF	298 W	P-Channel	TO-263AA	MOSFET (Metal Oxide)	140 A	10 V	-55 °C	150 °C	Surface Mount		15 V	50 V	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.77
		50	$ 6.20
		100	$ 5.55
		500	$ 4.89
		1000	$ 4.41
		2000	$ 4.13

Description

General part information

IXTA140N12T2 Series

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost

Documents

Technical documentation and resources