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BSS123W-TP
Discrete Semiconductor Products

BSS123W-TP

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BSS123W-TP
Discrete Semiconductor Products

BSS123W-TP

Active

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSS123W-TP
Current - Continuous Drain (Id) @ 25°C170 mA
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]29 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]200 mW
Rds On (Max) @ Id, Vgs6 Ohm
Supplier Device PackageSOT-23
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 3000$ 0.04
3000$ 0.04
N/A 0$ 0.04
0$ 0.04

Description

General part information

BSS123 Series

N-Channel 100 V 170mA 200mW Surface Mount SOT-23

Documents

Technical documentation and resources