Discrete Semiconductor Products

MPSA76 TIN/LEAD

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DARLINGTON TRANSISTORS PNP 50VCBO 50VCEO 10VEBO 100MA 4.0PF

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Discrete Semiconductor Products

Active

DARLINGTON TRANSISTORS PNP 50VCBO 50VCEO 10VEBO 100MA 4.0PF

Technical Specifications

Parameters and characteristics for this part

Specification	MPSA76 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10000
Frequency - Transition	125 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 ░C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic	1.5 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Mounting Type	Frequency - Transition	Transistor Type
Central Semiconductor Corp MPSA76 TIN/LEAD	150 °C	-65 ░C	625 mW	500 mA	1.5 V	TO-226AA	TO-226-3 TO-92-3	10000	TO-92-3	100 nA	Through Hole	125 MHz	PNP - Darlington

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.24
Mouser	N/A	5000	$ 0.23

General part information

DARLINGTON TRANSISTORS PNP 50VCBO 50VCEO 10VEBO 100MA 4.0PF

Technical documentation and resources