
BUK7K3R7-40NX
ActiveDUAL N-CHANNEL 40 V, 3.7 MOHM STANDARD LEVEL MOSFET IN LFPAK56D
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BUK7K3R7-40NX
ActiveDUAL N-CHANNEL 40 V, 3.7 MOHM STANDARD LEVEL MOSFET IN LFPAK56D
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Technical Specifications
Parameters and characteristics for this part
| Specification | BUK7K3R7-40NX |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 105 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 3277 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-1205, 8-LFPAK56 |
| Power - Max | 97 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 3.7 mOhm |
| Supplier Device Package | LFPAK56D |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BUK7K3R7-40N Series
Automotive qualified Dual N-channel standard level MOSFET using the latest Trench 15 low ohmic enhanced-Trench Bottom Oxide (e-TBO) technology, providing high ruggedness at low RDSon, housed in an LFPAK56D (Dual Power-SO8) package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.
Documents
Technical documentation and resources