Discrete Semiconductor Products

AUIRFU8403

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MOSFET N-CH 40V 100A I-PAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 40V 100A I-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFU8403

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	99 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3171 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	99 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.1 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Grade	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Qualification	Package / Case	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C
INFINEON AUIRFU8403	Through Hole	3171 pF	99 nC	175 °C	-55 °C	3.1 mOhm	10 V	Automotive	MOSFET (Metal Oxide)	3.9 V	40 V	N-Channel	99 W	AEC-Q101	IPAK TO-251-3 Short Leads TO-251AA	IPAK	20 V	100 A
INFINEON AUIRFU8403	Through Hole	3171 pF	99 nC	175 °C	-55 °C	3.1 mOhm	10 V	Automotive	MOSFET (Metal Oxide)	3.9 V	40 V	N-Channel	99 W	AEC-Q101	IPAK TO-251-3 Short Leads TO-251AA	IPAK	20 V	100 A

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General part information

N-Channel 40 V 100A (Tc) 99W (Tc) Through Hole IPAK

Technical documentation and resources

No documents available