Discrete Semiconductor Products

PN4916 PBFREE

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BIPOLAR TRANSISTORS - BJT PNP 30VCBO 30VCEO 5.0VEBO 100MA 625MW

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT PNP 30VCBO 30VCEO 5.0VEBO 100MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	PN4916 PBFREE

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	25 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	400 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	0.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Transistor Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Package / Case	Package / Case	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]
Central Semiconductor Corp PN4916 PBFREE	PNP	100 mA	0.3 V	Through Hole	150 °C	-65 °C	25 nA	TO-226AA	TO-226-3 TO-92-3	400 MHz	250	625 mW	TO-92-3	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.15
Mouser	N/A	5000	$ 0.15
		10000	$ 0.14

General part information

BIPOLAR TRANSISTORS - BJT PNP 30VCBO 30VCEO 5.0VEBO 100MA 625MW

Technical documentation and resources