Discrete Semiconductor Products

SICU0260B-TP

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DIODE SIL CARBIDE 650V 2A DPAK

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Discrete Semiconductor Products

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DIODE SIL CARBIDE 650V 2A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SICU0260B-TP

Capacitance @ Vr, F	175 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Technology	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Package / Case	Reverse Recovery Time (trr)
MCC (Micro Commercial Components) SICU0260B-TP	SiC (Silicon Carbide) Schottky	Surface Mount	175 ░C	-55 °C	175 pF	DPAK	650 V	1.6 V	500 mA	2 A	10 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3
MCC (Micro Commercial Components) SICU0260B-TP	SiC (Silicon Carbide) Schottky	Surface Mount	175 ░C	-55 °C	175 pF	DPAK	650 V	1.6 V	500 mA	2 A	10 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3	0 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 2A Surface Mount DPAK

Technical documentation and resources