Discrete Semiconductor Products

SI5618-TP

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MOSFET P-CH 60V 1.9A SOT23

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Discrete Semiconductor Products

Active

MOSFET P-CH 60V 1.9A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	SI5618-TP

Current - Continuous Drain (Id) @ 25°C	1.9 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9.5 nC
Input Capacitance (Ciss) (Max) @ Vds	580 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	830 mW
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
Micro Commercial Components SI5618-TP	P-Channel	830 mW	60 V	150 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	3 V	SOT-23	Surface Mount	9.5 nC	-55 °C	150 °C	1.9 A	SC-59 SOT-23-3 TO-236-3	20 V	580 pF

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General part information

P-Channel 60 V 1.9A (Ta) 830mW Surface Mount SOT-23

Technical documentation and resources