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GT30J121 - IGBTs, 600 V/30 A IGBT, TO-3P(N)
Discrete Semiconductor Products

2SC5198-O(S1,E

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 140 V, 10 A, TO-3P(N)

GT30J121 - IGBTs, 600 V/30 A IGBT, TO-3P(N)
Discrete Semiconductor Products

2SC5198-O(S1,E

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 140 V, 10 A, TO-3P(N)

Technical Specifications

Parameters and characteristics for this part

Specification2SC5198-O(S1,E
Current - Collector Cutoff (Max) [Max]5 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]55
Frequency - Transition30 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseSC-65-3, TO-3P-3
Power - Max [Max]100 W
Supplier Device PackageTO-3P(N)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]140 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

2SC5198 Series

Bipolar Transistors, NPN Bipolar Transistor, 140 V, 10 A, TO-3P(N)