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GANE350-650FBAZ
Discrete Semiconductor Products

GANE350-650FBAZ

Active
Nexperia USA Inc.

650 V, 350 MOHM GALLIUM NITRIDE (GAN) FET IN A DFN 5 MM X 6 MM PACKAGE

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DocumentsGANE350-650FBAZ | Datasheetplastic thermal enhanced small outline package; no leads; 5 terminals; body: 5 × 6 × 0.9 mm+3
GANE350-650FBAZ
Discrete Semiconductor Products

GANE350-650FBAZ

Active
Nexperia USA Inc.

650 V, 350 MOHM GALLIUM NITRIDE (GAN) FET IN A DFN 5 MM X 6 MM PACKAGE

Deep-Dive with AI

DocumentsGANE350-650FBAZ | Datasheetplastic thermal enhanced small outline package; no leads; 5 terminals; body: 5 × 6 × 0.9 mm+3

Technical Specifications

Parameters and characteristics for this part

SpecificationGANE350-650FBAZ
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Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2487$ 1.93

Description

General part information

GANE350-650FBA Series

The GANE350-650FBA is a general purpose 650 V, 350 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance.