Specification	BUK9M11-40HX

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1345 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	50 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V, -10 V
Vgs(th) (Max) @ Id	2.2 V

BUK9M11-40H Series

N-channel 40 V, 11.0 mΩ logic level MOSFET in LFPAK33

Part	Supplier Device Package	Technology	Grade	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Qualification	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
Nexperia USA Inc. BUK9M11-40HX	LFPAK33	MOSFET (Metal Oxide)	Automotive	4.5 V 10 V	35 A	Surface Mount	-10 V 16 V	AEC-Q101	40 V	50 W	11 mOhm	N-Channel	1345 pF	175 °C	-55 °C	21 nC	2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1198	$ 1.24

Description

General part information

BUK9M11-40H Series

Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.