Specification	NTMFS4D0N08XT1G

Current - Continuous Drain (Id) @ 25°C	119 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	107 W
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

NTMFS4D0N08X Series

MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 3.5mΩ, 119 A

Part	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Supplier Device Package
ON Semiconductor NTMFS4D0N08XT1G	MOSFET (Metal Oxide)	N-Channel	6 V 10 V	107 W	20 V	2400 pF	80 V	Surface Mount	8-PowerTDFN 5 Leads	119 A	-55 °C	175 ░C	3.6 V	5-DFN (5x6)	8-SOFL

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 3.5mΩ, 119 A

Technical documentation and resources