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Technical Specifications
Parameters and characteristics for this part
| Specification | HP8MA2TB1 |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18 A, 15 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC, 22 nC |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerTDFN |
| Power - Max | 3 W |
| Rds On (Max) @ Id, Vgs | 9.6 mOhm, 17.9 mOhm |
| Supplier Device Package | 8-HSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
HP8MA2 Series
HP8MA2 is low on-resistance and small surface mount package MOSFET for switching application.
Documents
Technical documentation and resources