Discrete Semiconductor Products

AOT160A60L

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MOSFET N-CH 600V 24A TO220

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Discrete Semiconductor Products

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MOSFET N-CH 600V 24A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT160A60L

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	46 nC
Input Capacitance (Ciss) (Max) @ Vds	2340 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	250 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Technology	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Alpha & Omega Semiconductor Inc. AOT160A60L	160 mOhm	46 nC	2340 pF	600 V	250 W	3.6 V	N-Channel	10 V	20 V	Through Hole	MOSFET (Metal Oxide)	TO-220-3	150 °C	-55 °C	24 A	TO-220

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 24A (Tc) 250W (Tc) Through Hole TO-220

Technical documentation and resources

No documents available