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Technical Specifications

Parameters and characteristics for this part

SpecificationHMC8205BCHIPS
Current - Supply1.3 A
Frequency [Max]6 GHz
Frequency [Min]400 MHz
Gain26.5 dB
Mounting TypeSurface Mount
Package / CaseDie
RF TypeRadar
Supplier Device PackageDie
Test Frequency [Max]6 GHz
Test Frequency [Min]4 GHz
Voltage - Supply [Max]55 V
Voltage - Supply [Min]28 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 5$ 986.871m+

Description

General part information

HMC8205 Series

The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.The HMC8205BF10 is ideal for pulsed or continuous wave (CW) applications, such as military jammers, wireless infrastructure, radar, and general-purpose amplification.The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).The HMC8205BCHIPS is a gallium nitride (GaN), broadband power amplifier that delivers 45.5 dBm (35 W) with 40% power added efficiency (PAE) across an instantaneous bandwidth of 0.4 GHz to 6 GHz. No external matching is required to achieve full band operation. No external inductor is required to bias the amplifier. In addition, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BCHIPS.The HMC8205BCHIPS is ideal for pulsed or continuous wave (CW) applications, such as military jammers, wireless infrastructure, radar, and general-purpose amplification.APPLICATIONSMilitary jammersCommercial and military radarPower amplifier stage for wireless infrastructureTest and measurement equipment