HMC435AMS8GTR
ObsoleteIC RF SWITCH SPDT 4GHZ 8MSOP
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HMC435AMS8GTR
ObsoleteIC RF SWITCH SPDT 4GHZ 8MSOP
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC435AMS8GTR |
|---|---|
| Circuit | SPDT |
| Frequency Range [Max] | 4 GHz |
| Frequency Range [Min] | 0 Hz |
| IIP3 [Min] | 53 dBm |
| Impedance | 50 Ohms |
| Insertion Loss | 0.8 dB |
| Isolation | 48 dB |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 C |
| P1dB | 30 dBm |
| Package / Case | 3 mm, 0.118 in |
| Package / Case | Exposed Pad, 8-MSOP, 8-TSSOP |
| RF Type | General Purpose |
| Supplier Device Package | 8-MSOP-EP |
| Test Frequency | 2.5 GHz |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 500 | $ 2.72 | <4d |
| 1000 | $ 2.57 | |||
| 1500 | $ 2.49 | |||
| 2500 | $ 2.41 | |||
| 3500 | $ 2.39 | |||
Description
General part information
HMC435 Series
The HMC435AMS8G(E) is a non-reflective DC to 4 GHz GaAs MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with exposed ground paddle. The switch is ideal for cellular/3G and WiMAX/4G applications yielding up to 60 dB isolation, low 0.8 dB insertion loss and +50 dBm input IP3. Power handling is excellent up through the 3.8 GHz WiMAX band with the switch offering a P1dB compression of +30 dBm. On-chip circuitry allows positive voltage control of 0/+5 Volts at very low DC currents.APPLICATIONSBasestations & RepeatersCellular/3G and WiMAX/4GInfrastructure and Access PointsCATV/CMTSTest Instrumentation
Documents
Technical documentation and resources
