IRFP4468PBF
ActivePOWER MOSFET, N CHANNEL, 100 V, 290 A, 0.0026 OHM, TO-247AC, THROUGH HOLE
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IRFP4468PBF
ActivePOWER MOSFET, N CHANNEL, 100 V, 290 A, 0.0026 OHM, TO-247AC, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRFP4468PBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 195 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 540 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 19860 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 520 W |
| Rds On (Max) @ Id, Vgs | 2.6 mOhm |
| Supplier Device Package | TO-247AC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRFP4468 Series
The IRFP4468PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Documents
Technical documentation and resources