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Silicon Carbide Schottky Diode, Single, 650 V, 20 A, 51 nC, TO-263 (D2PAK), 2 Pins
Discrete Semiconductor Products

FFSB2065B-F085

Active
ON Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 20 A, 51 NC, TO-263 (D2PAK), 2 PINS

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Silicon Carbide Schottky Diode, Single, 650 V, 20 A, 51 nC, TO-263 (D2PAK), 2 Pins
Discrete Semiconductor Products

FFSB2065B-F085

Active
ON Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 20 A, 51 NC, TO-263 (D2PAK), 2 PINS

Technical Specifications

Parameters and characteristics for this part

SpecificationFFSB2065B-F085
Capacitance @ Vr, F866 pF
Current - Reverse Leakage @ Vr40 µA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
QualificationAEC-Q101
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Supplier Device PackageTO-263 (D2PAK)
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.03
10$ 5.17
100$ 4.30
Digi-Reel® 1$ 6.03
10$ 5.17
100$ 4.30
Tape & Reel (TR) 800$ 3.13
NewarkEach (Supplied on Full Reel) 1$ 3.22
1600$ 3.10
3200$ 2.99
4800$ 2.89
6400$ 2.79
ON SemiconductorN/A 1$ 2.88

Description

General part information

FFSB2065B-F085 Series

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.