Specification	RN2407,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	S-Mini
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

RN2407 Series

Bipolar Transistors, PNP Bias Resistor Built-in Transistors (BRT), 10 kΩ/47 kΩ, SOT-346(S-Mini)

Part	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Resistor - Emitter Base (R2)	Power - Max [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Mounting Type	Resistor - Base (R1)
Toshiba Semiconductor and Storage RN2407,LF	SC-59 SOT-23-3 TO-236-3	50 V	200 MHz	47 kOhms	200 mW	PNP - Pre-Biased	80	100 mA	300 mV	500 nA	S-Mini	Surface Mount	10 kOhms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, PNP Bias Resistor Built-in Transistors (BRT), 10 kΩ/47 kΩ, SOT-346(S-Mini)

Technical documentation and resources