Discrete Semiconductor Products

DI105N04PQ-AQ

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MOSFETS MOSFET, POWERQFN 5X6, 40V, 105A, 150C, N, AEC-Q101

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Discrete Semiconductor Products

Active

MOSFETS MOSFET, POWERQFN 5X6, 40V, 105A, 150C, N, AEC-Q101

Technical Specifications

Parameters and characteristics for this part

Specification	DI105N04PQ-AQ

Current - Continuous Drain (Id) @ 25°C	105 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	3033 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	83 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	8-QFN
Supplier Device Package [x]	5
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Grade	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	FET Type	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
Diotec Semiconductor DI105N04PQ-AQ	20 V	8-PowerTDFN	23 nC	4.5 V 10 V	Automotive	8-QFN	5	6	2.6 mOhm	83 W	MOSFET (Metal Oxide)	150 °C	-55 °C	105 A	N-Channel	AEC-Q101	3033 pF	Surface Mount	2.4 V	40 V

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General part information

N-Channel 40 V 105A (Tc) 83W (Tc) Surface Mount 8-QFN (5x6)

Technical documentation and resources