Specification	SSM3K361R,LXHF

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	430 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1.2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	69 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

SSM3K361R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 100 V, 3.5 A, 0.069 Ω@10V, SOT-23F

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Grade	Operating Temperature	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Qualification
Toshiba Semiconductor and Storage SSM3K361R,LXHF	SOT-23-3 Flat Leads	3.5 A	1.2 W	2.5 V	3.2 nC	Surface Mount	4.5 V 10 V	Automotive	175 °C	100 V	430 pF	SOT-23F	MOSFET (Metal Oxide)	69 mOhm	20 V	N-Channel	AEC-Q101
Toshiba Semiconductor and Storage SSM3K361R,LF	SOT-23-3 Flat Leads	3.5 A	1.2 W	2.5 V	3.2 nC	Surface Mount	4.5 V 10 V		175 °C	100 V	430 pF	SOT-23F	MOSFET (Metal Oxide)	69 mOhm	20 V	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 100 V, 3.5 A, 0.069 Ω@10V, SOT-23F

Technical documentation and resources