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SFAS801G MNG
Discrete Semiconductor Products

SRAS8100H

Active
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 8A TO263AB

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SFAS801G MNG
Discrete Semiconductor Products

SRAS8100H

Active
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 8A TO263AB

Technical Specifications

Parameters and characteristics for this part

SpecificationSRAS8100H
Current - Average Rectified (Io)8 A
Current - Reverse Leakage @ Vr100 µA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
QualificationAEC-Q101
Speed500 ns, 200 mA
Supplier Device PackageTO-263AB (D2PAK)
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.44
Tape & Reel (TR) 1600$ 0.48
2400$ 0.46
4000$ 0.43
5600$ 0.42
8000$ 0.41

Description

General part information

SRAS8100 Series

Diode 100 V 8A Surface Mount TO-263AB (D2PAK)