Discrete Semiconductor Products

BYM36D-TAP

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DIODE AVALANCHE 800V 2.9A SOD64

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Discrete Semiconductor Products

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DIODE AVALANCHE 800V 2.9A SOD64

Technical Specifications

Parameters and characteristics for this part

Specification	BYM36D-TAP

Current - Average Rectified (Io)	2.9 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOD-64, Axial
Reverse Recovery Time (trr)	150 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-64
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.78 V

Part	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Reverse Leakage @ Vr	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Supplier Device Package	Package / Case	Reverse Recovery Time (trr)
Vishay General Semiconductor - Diodes Division BYM36A-TAP	1.6 V	3 A	175 ░C	-55 C	Through Hole	5 µA	Avalanche	200 V	200 mA 500 ns	SOD-64	Axial SOD-64
Vishay General Semiconductor - Diodes Division BYM36D-TAP	1.78 V	2.9 A	175 ░C	-55 C	Through Hole	5 µA	Avalanche	800 V	200 mA 500 ns	SOD-64	Axial SOD-64	150 ns
Vishay General Semiconductor - Diodes Division BYM36B-TAP	1.6 V	3 A	175 ░C	-55 C	Through Hole	5 µA	Avalanche	400 V	200 mA 500 ns	SOD-64	Axial SOD-64

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 2.9A Through Hole SOD-64

Technical documentation and resources