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MEA250-12DA
Discrete Semiconductor Products

MEA250-12DA

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LITTELFUSE

DIODE MODULE GP 1200V 260A Y4-M6

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MEA250-12DA
Discrete Semiconductor Products

MEA250-12DA

Active
LITTELFUSE

DIODE MODULE GP 1200V 260A Y4-M6

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMEA250-12DA
Current - Average Rectified (Io) (per Diode)260 A
Current - Reverse Leakage @ Vr1200 V, 12 mA
Diode Configuration1 Pair Common Anode
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-40 °C
Package / CaseY4-M6
Reverse Recovery Time (trr)500 ns
Speed500 ns, 200 mA
Supplier Device PackageY4-M6
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBox 1$ 78.761m+
12$ 71.38
102$ 63.99
N/A 0$ 77.571m+

Description

General part information

MEA250 Series

The Fast Dual Diode series offers various packages and breakdown voltages up to 1200V. Utilizing FRED dies enables fast reverse recovery capabilities.

Documents

Technical documentation and resources