Discrete Semiconductor Products

SI1413EDH-T1-E3

Obsolete

MOSFET P-CH 20V 2.3A SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 2.3A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1413EDH-T1-E3

Current - Continuous Drain (Id) @ 25°C	2.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs [Max]	115 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	450 mV

Part	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	FET Type	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
Vishay General Semiconductor - Diodes Division SI1413EDH-T1-E3	SC-70-6	1 W	2.3 A	115 mOhm	Surface Mount	P-Channel	MOSFET (Metal Oxide)	12 V	1.8 V 4.5 V	20 V	8 nC	450 mV	-55 °C	150 °C	6-TSSOP SC-88 SOT-363

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 2.3A (Ta) 1W (Ta) Surface Mount SC-70-6

Technical documentation and resources