Discrete Semiconductor Products

RN2714,LF

Obsolete

PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM

Technical Specifications

Parameters and characteristics for this part

Specification	RN2714,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Mounting Type	Surface Mount
Package / Case	SOT-353, SC-70-5, 5-TSSOP
Power - Max [Max]	200 mW
Resistor - Base (R1)	1 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	USV
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Base (R1)	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Resistor - Emitter Base (R2)	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Transistor Type
Toshiba Semiconductor and Storage RN2714,LF	Surface Mount	100 mA	50	1 kOhms	USV	50 V	200 mW	10 kOhms	500 nA	300 mV	5-TSSOP SC-70-5 SOT-353	2 PNP - Pre-Biased (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200mW Surface Mount USV

Technical documentation and resources

No documents available