Discrete Semiconductor Products

SIA472EDJ-T1-GE3

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MOSFET N-CH 30V 12A PPAK SC70-6

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Discrete Semiconductor Products

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MOSFET N-CH 30V 12A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA472EDJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	1265 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	19.2 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Single
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Technology	Power Dissipation (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIA472EDJ-T1-GE3	MOSFET (Metal Oxide)	19.2 W	N-Channel	2.5 V 4.5 V	PowerPAK® SC-70-6	20 mOhm	12 V	1265 pF	1.5 V	Surface Mount	-55 °C	150 °C	36 nC	30 V	PowerPAK® SC-70-6 Single	12 A

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General part information

N-Channel 30 V 12A (Tc) 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Technical documentation and resources