Discrete Semiconductor Products

HER108G-TP

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DIODE STANDARD 1000V 1A DO41

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Discrete Semiconductor Products

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DIODE STANDARD 1000V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	HER108G-TP

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Mounting Type	Supplier Device Package	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Package / Case	Reverse Recovery Time (trr)	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
Micro Commercial Components HER108G-TP	Through Hole	DO-41	1 A	1.7 V	200 mA 500 ns	1000 V	5 µA	15 pF	Axial DO-204AL DO-41	75 ns	Standard	-55 °C	125 °C

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General part information

Diode 1000 V 1A Through Hole DO-41

Technical documentation and resources

No documents available