Specification	SSM6K514NU,LF

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1110 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	11.6 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

SSM6K514 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 40 V, 12 A, 0.0116 Ω@10V, SOT-1220(UDFN6B)

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM6K514NU,LF	2.5 W	12 A	MOSFET (Metal Oxide)	20 V	Surface Mount	4.5 V 10 V	N-Channel	40 V	1110 pF	6-UDFNB (2x2)	11.6 mOhm	150 °C	7.5 nC	2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 40 V, 12 A, 0.0116 Ω@10V, SOT-1220(UDFN6B)

Technical documentation and resources