Discrete Semiconductor Products

PMZ350UPEYL

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MOSFET P-CH 20V 1A DFN1006-3

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Discrete Semiconductor Products

Active

MOSFET P-CH 20V 1A DFN1006-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMZ350UPEYL

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	127 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	3.125 W, 360 mW
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	SOT-883
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Package / Case
Freescale Semiconductor - NXP PMZ350UPEYL	1.8 V 4.5 V	-55 °C	150 °C	P-Channel	Surface Mount	SOT-883	3.125 W 360 mW	1 A	950 mV	450 mOhm	MOSFET (Metal Oxide)	20 V	1.9 nC	127 pF	8 V	SC-101 SOT-883

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General part information

P-Channel 20 V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surface Mount SOT-883

Technical documentation and resources