BUK9M53-60EX

Active

MOSFET N-CH 60V 17A LFPAK33

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 60V 17A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9M53-60EX

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	683 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	36 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	46 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.1 V

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Qualification	Grade	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Freescale Semiconductor - NXP BUK9M53-60EX	2.1 V	10 V	683 pF	6 nC	Surface Mount	AEC-Q101	Automotive	46 mOhm	5 V	17 A	36 W	N-Channel	MOSFET (Metal Oxide)	60 V	LFPAK33	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 17A (Tc) 36W (Tc) Surface Mount LFPAK33

Technical documentation and resources