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20-TSSOP
Integrated Circuits (ICs)

TPS2311IPW

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Texas Instruments

3-V TO 13-V DUAL CHANNEL HOT SWAP WITH INTERDEPENDENT CHANNEL CIRCUIT BREAKING AND POWER GOOD

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20-TSSOP
Integrated Circuits (ICs)

TPS2311IPW

Active
Texas Instruments

3-V TO 13-V DUAL CHANNEL HOT SWAP WITH INTERDEPENDENT CHANNEL CIRCUIT BREAKING AND POWER GOOD

Technical Specifications

Parameters and characteristics for this part

SpecificationTPS2311IPW
ApplicationsGeneral Purpose
Current - Supply500 µA
FeaturesUVLO, Latched Fault
Internal Switch(s)False
Mounting TypeSurface Mount
Number of Channels [custom]2
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case20-TSSOP
Package / Case [x]0.173 in
Package / Case [y]4.4 mm
Programmable FeaturesCircuit Breaker, Slew Rate, Fault Timeout
Supplier Device Package20-TSSOP
TypeHot Swap Controller
Voltage - Supply [Max]5.5 V, 13 V
Voltage - Supply [Min]3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.88
10$ 4.38
70$ 4.14
140$ 3.59
280$ 3.40
560$ 3.05
1050$ 2.58
2520$ 2.45
Texas InstrumentsTUBE 1$ 4.02
100$ 3.52
250$ 2.47
1000$ 1.99

Description

General part information

TPS2311 Series

The TPS2310 and TPS2311 are dual-channel hot-swap controllers that use external N-channel MOSFETs as high-side switches in power applications. Features of these devices, such as overcurrent protection (OCP), inrush current control, output-power status reporting, and the ability to discriminate between load transients and faults, are critical requirements for hot-swap applications.

The TPS2310/11 devices incorporate undervoltage lockout (UVLO) and power-good (PG) reporting to ensure the device is off at start-up and confirm the status of the output voltage rails during operation. Each internal charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs, reducing power transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during power-state transitions, to disregard transients for a programmable period.

DISCH1, DISCH2 –DISCH1 and DISCH2 should be connected to the sources of the external N-channel MOSFET transistors connected to GATE1 and GATE2, respectively. These pins discharge the loads when the MOSFET transistors are disabled. They also serve as reference-voltage connections for internal gate voltage-clamp circuitry.