Specification	PMDXB1200UPEZ

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	410 mA
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	1.2 nC
Input Capacitance (Ciss) (Max) @ Vds	43.2 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-XFDFN Exposed Pad
Power - Max [Max]	285 mW
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	DFN1010B-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	950 mV

PMDXB1200 Series

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Configuration	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Power - Max [Max]	Vgs(th) (Max) @ Id
Nexperia USA Inc. PMDXB1200UPEZ	410 mA	Surface Mount	150 °C	-55 °C	2 P-Channel (Dual)	MOSFET (Metal Oxide)	30 V	1.4 Ohm	DFN1010B-6	43.2 pF	1.2 nC	6-XFDFN Exposed Pad	285 mW	950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.37
		10	$ 0.29
		100	$ 0.17
		500	$ 0.16
		1000	$ 0.11
		2000	$ 0.10
	Digi-Reel®	1	$ 0.37
		10	$ 0.29
		100	$ 0.17
		500	$ 0.16
		1000	$ 0.11
		2000	$ 0.10
	N/A	5741	$ 0.61
		1794798	$ 0.21
	Tape & Reel (TR)	5000	$ 0.10

Description

General part information

PMDXB1200 Series

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.