Discrete Semiconductor Products

PMDXB1200UPEZ

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MOSFET 2P-CH 30V 0.41A 6DFN

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Discrete Semiconductor Products

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MOSFET 2P-CH 30V 0.41A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	PMDXB1200UPEZ

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	410 mA
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	1.2 nC
Input Capacitance (Ciss) (Max) @ Vds	43.2 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-XFDFN Exposed Pad
Power - Max [Max]	285 mW
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	DFN1010B-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	950 mV

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Configuration
Freescale Semiconductor - NXP PMDXB1200UPEZ	410 mA	43.2 pF	6-XFDFN Exposed Pad	285 mW	1.2 nC	MOSFET (Metal Oxide)	30 V	1.4 Ohm	DFN1010B-6	Surface Mount	950 mV	-55 °C	150 °C	2 P-Channel

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General part information

Mosfet Array 30V 410mA 285mW Surface Mount DFN1010B-6

Technical documentation and resources