Discrete Semiconductor Products

GBS4G

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Discrete Semiconductor Products

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Technical Specifications

Parameters and characteristics for this part

Specification	GBS4G

Current - Average Rectified (Io)	2.3 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	4-ESIP, 4-SIP
Supplier Device Package	4-SIL, 4-SIP
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.05 V
Voltage - Peak Reverse (Max) [Max]	400 V

Part	Diode Type	Mounting Type	Voltage - Peak Reverse (Max) [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If	Operating Temperature [Min]	Operating Temperature [Max]	Technology
Diotec Semiconductor GBS4B	Single Phase	Through Hole	100 V	5 µA	2.3 A	4-SIL	4-ESIP	1.05 V	-50 °C	150 °C	Standard
Diotec Semiconductor GBS4J	Single Phase	Through Hole	600 V	5 µA	2.3 A	4-SIL	4-ESIP	1.05 V	-50 °C	150 °C	Standard
Diotec Semiconductor GBS4G	Single Phase	Through Hole	400 V	5 µA	2.3 A	4-SIL 4-SIP	4-ESIP 4-SIP	1.05 V	-50 °C	150 °C	Standard
Diotec Semiconductor GBS4A	Single Phase	Through Hole	50 V	5 µA	2.3 A	4-SIL	4-ESIP	1.05 V	-50 °C	150 °C	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 400 V Through Hole 4-SIL

Technical documentation and resources