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SOT 23-3
Discrete Semiconductor Products

BASH19LT1G

Active
ON Semiconductor

HIGH VOLTAGE SWITCHING DIODE SERIES, +175°C

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SOT 23-3
Discrete Semiconductor Products

BASH19LT1G

Active
ON Semiconductor

HIGH VOLTAGE SWITCHING DIODE SERIES, +175°C

Technical Specifications

Parameters and characteristics for this part

SpecificationBASH19LT1G
Capacitance @ Vr, F5 pF
Current - Average Rectified (Io)200 mA
Current - Reverse Leakage @ Vr100 nA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseSOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)50 ns
SpeedAny Speed
Speed200 mA
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]120 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.19
10$ 0.11
100$ 0.07
500$ 0.05
1000$ 0.04
Digi-Reel® 1$ 0.19
10$ 0.11
100$ 0.07
500$ 0.05
1000$ 0.04
Tape & Reel (TR) 3000$ 0.03
6000$ 0.03
9000$ 0.02
15000$ 0.02
21000$ 0.02
30000$ 0.02
75000$ 0.02
150000$ 0.02
300000$ 0.02
NewarkEach 10000$ 0.02
25000$ 0.02
ON SemiconductorN/A 1$ 0.02

Description

General part information

BASH19 Series

This High Voltage Switching Diode series offered in SOT-23 package is designed for use in ultra high speed, surface mount switching applications. The device series features a +175°C TJ(MAX)specification and thus rated for high temperature and mission critical applications.